Organic‐Single‐Crystal Vertical Field‐Effect Transistors and Phototransistors

Abstract Organic vertical field‐effect transistors (VFETs) have attracted significant attention over the past years due to their unique characteristics of high output currents, low operation voltages, high working frequency, and promising high‐density integration for circuits. However, most currently reported VFETs demonstrate poor performance, e.g., with low on/off ratio and current density. Here, the first organic‐single‐crystal vertical field‐effect transistors (SC‐VFETs) and phototransistors are constructed from 2,6‐diphenyl anthracene (DPA) through a modified method. The devices exhibit high on/off ratio of 10⁶ and a high current density of 100 mA cm^‐2 under a small voltage of −5 V, which are proved to be one of the best performances for organic VFETs. Furthermore, superior photoresponse performance with photoresponsivity of 110 A W^‐1 and detectivity of 10¹³ Jones is obtained under light illumination for vertical phototransistors. These results confirm the control of the intrinsic Schottky barrier height at the graphene–DPA junction along with good interfacial contact effectively suppressing the dark current to realize a large on/off ratio and high light detectivity. This vertical integration of graphene with organic single crystals via simple, effective fabrication processes opens up new opportunities to realize high‐performance integrated organic vertical electronic and optoelectronic devices.