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journal article·2024-05Open access

A Universal Perovskite/C60 Interface Modification via Atomic Layer Deposited Aluminum Oxide for Perovskite Solar Cells and Perovskite–Silicon Tandems

Kerem Artuk, Deniz Turkay, Mounir D. Mensi, Julian A. Steele, Daniel A. Jacobs, Mostafa Othman, Xin Yu Chin, Soo‐Jin Moon, Ayodhya N. Tiwari, Aïcha Hessler‐Wyser, Quentin Jeangros, Christophe Ballif, Christian M. Wolff

Advanced Materials· Volume 36· Issue 21
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Source abstract

Abstract

Abstract The primary performance limitation in inverted perovskite‐based solar cells is the interface between the fullerene‐based electron transport layers and the perovskite. Atomic layer deposited thin aluminum oxide (AlOX) interlayers that reduce nonradiative recombination at the perovskite/C60 interface are developed, resulting in >60 millivolts improvement in open‐circuit voltage and 1% absolute improvement in power conversion efficiency. Surface‐sensitive characterizations indicate the presence of a thin, conformally deposited AlOx layer, functioning as a passivating contact. These interlayers work universally using different lead‐halide–based absorbers with different compositions where the 1.55 electron volts bandgap single junction devices reach >23% power conversion efficiency. A reduction of metallic Pb0 is found and the compact layer prevents in‐ and egress of volatile species, synergistically improving the stability. AlOX‐modified wide‐bandgap perovskite absorbers as a top cell in a monolithic perovskite–silicon tandem enable a certified power conversion efficiency of 29.9% and open‐circuit voltages above 1.92 volts for 1.17 square centimeters device area.
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Research context

Electronic materials

OpenAlex topics: Perovskite Materials and Applications · Conducting polymers and applications · Organic Electronics and Photovoltaics

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

École Polytechnique Fédérale de Lausanne (EPFL) Institute of Electrical and Microengineering (IEM) Photovoltaics and Thin‐Film Electronics Laboratory (PV‐Lab) Rue de la Maladière 71b Neuchâtel 2002 Switzerland

École Polytechnique Fédérale de Lausanne (EPFL‐VS) Institute of Chemical Sciences and Engineering (ISIC‐XRDSAP) Rue de L'Industrie 17 Sion 1951 Switzerland

Australian Institute for Bioengineering and Nanotechnology (AIBN) The University of Queensland Brisbane QLD 4072 Australia

School of Mathematics and Physics The University of Queensland Brisbane QLD 4072 Australia

Centre Suisse d'Electronique et de Microtechnique (CSEM) Rue Jaquet‐Droz 1 Neuchâtel 2002 Switzerland

Laboratory for Thin Films and Photovoltaics Empa—Swiss Federal Laboratories for Materials Science and Technology Ueberlandstrasse 129 Duebendorf 8600 Switzerland

Funding

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung · Bundesamt für Energie · Australian Research Council · Staatssekretariat für Bildung, Forschung und Innovation

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