DataVXAdvanced MaterialsPaper
journal article·2016-02

Extremely Low Contact Resistance on Graphene through n‐Type Doping and Edge Contact Design

Hyung‐Youl Park, Woo‐Shik Jung, Dong‐Ho Kang, Jaeho Jeon, Gwangwe Yoo, Yongkook Park, Jinhee Lee, Yun Hee Jang, Jaeho Lee, Seongjun Park, Hyun‐Yong Yu, Byungha Shin, Sungjoo Lee, Jin‐Hong Park

Advanced Materials· Volume 28· Issue 5
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Source abstract

Abstract

The effects of graphene n-doping on a metal–graphene contact are studied in combination with 1D edge contacts, presenting a record contact resistance of 23 Ω μm at room temperature (19 Ω μm at 100 K). This contact scheme is applied to a graphene–perovskite hybrid photodetector, significantly improving its performance (0.6 → 1.8 A W−1 in photoresponsivity and 3.3 × 104 → 5.4 × 104 Jones in detectivity). As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
Source: openalex_inverted_index · Quality: baseline

Research context

NanomaterialsElectronic materials

OpenAlex topics: Graphene research and applications · Nanowire Synthesis and Applications · 2D Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Electronics and Electrical Engineering Sungkyunkwan University Suwon 440‐746 Korea

Department of Electrical Engineering Stanford University Stanford CA 94305 USA

School of Electronics and Electrical Engineering SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon 440‐746 Korea

School of Materials Science and Engineering Gwangju Institute of Science and Technology Gwangju 500‐712 Korea

Samsung Advanced Institute of Technology Samsung Electronics Co., Ltd Yongin 446‐712 Korea

School of Electrical Engineering Korea University Seoul 136‐701 Korea

Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 305‐338 Korea

Funding

Korea Government (MSIP)

References (27)

Show source-provided references
1. 10.1021/nl204481s10.1021/nl204481s ↗
2. 10.1126/science.115799610.1126/science.1157996 ↗
3. 10.1021/nn901587x10.1021/nn901587x ↗
4. 10.1038/nature0771910.1038/nature07719 ↗
5. 10.1126/science.112592510.1126/science.1125925 ↗
6. 10.1021/nl803316h10.1021/nl803316h ↗
7. 10.1126/science.118428910.1126/science.1184289 ↗
8. 10.1063/1.329024810.1063/1.3290248 ↗
9. 10.1016/j.physe.2009.11.08010.1016/j.physe.2009.11.080 ↗
10. 10.1063/1.349180410.1063/1.3491804 ↗
11. 10.1063/1.354918310.1063/1.3549183 ↗
12. 10.1021/nl300266p10.1021/nl300266p ↗
13. 10.1016/j.diamond.2012.01.01910.1016/j.diamond.2012.01.019 ↗
14. Bartolomeo A. D. · J. Phys.: Condens. Matter · 2013 · 25 · 155303
15. 10.1063/1.471957910.1063/1.4719579 ↗
16. 10.1063/1.480464310.1063/1.4804643 ↗
17. 10.1038/nnano.2011.610.1038/nnano.2011.6 ↗
18. 10.1103/PhysRevB.79.19542510.1103/PhysRevB.79.195425 ↗
19. 10.1021/nn405834b10.1021/nn405834b ↗
20. 10.1021/nn400671z10.1021/nn400671z ↗
21. 10.1021/nn500043y10.1021/nn500043y ↗
22. 10.1126/science.124435810.1126/science.1244358 ↗
23. 10.1021/nn202463g10.1021/nn202463g ↗
24. 10.1038/nnano.2008.6710.1038/nnano.2008.67 ↗
25. 10.1002/smll.20130376810.1002/smll.201303768 ↗
26. 10.1021/nl303410g10.1021/nl303410g ↗
27. 10.1021/jp806437y10.1021/jp806437y ↗