Electrical Instability Induced by Electron Trapping in Low‐Bandgap Donor–Acceptor Polymer Field‐Effect Transistors

The mechanism of electrical instability and the double slope of p-type organic field-effect transistors (OFETs) fabricated from low-bandgap donor–acceptor copolymers are resolved. Those polymers enable electron conduction in the device, which leads to electron trapping and consequent formation of –SiO−. This causes a turn-on voltage shift, hole-mobility increase, and double-slope occurrence. These findings tremendously impact the molecular design and device engineering of OFETs. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.