Excitonic Properties and Near‐Infrared Coherent Random Lasing in Vertically Aligned CdSe Nanowires

High-quality, vertically aligned CdSe nanowires (figure, top left) are prepared by the vapor transport growth technique. Strong free-exciton absorption and emission are observed (top right) and, under optical excitation, near-infrared coherent random lasing is demonstrated for the first time from CdSe nanowires at room temperature (bottom). The results show that this material system holds promise for optoelectronic applications.