Band‐Bending in Organic Semiconductors: the Role of Alkali‐Halide Interlayers
Source abstract
Abstract
Band-bending in organic semiconductors, occurring at metal/alkali-halide cathodes in organic-electronic devices, is experimentally revealed and electrostatically modeled. Metal-to-organic charge transfer through the insulator, rather than doping of the organic by alkali-metal ions, is identified as the origin of the observed band-bending, which is in contrast to the localized interface dipole occurring without the insulating buffer layer. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Organic Light-Emitting Diodes Research · Organic Electronics and Photovoltaics · Conducting polymers and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Humboldt‐Universität zu Berlin, Institut für Physik Newtonstr. 15 12489 Berlin Germany
Helmholtz Zentrum Berlin für Materialien und Energie GmbH Bereich Solarenergieforschung Albert‐Einstein‐Str. 15 D‐12489 Berlin Germany
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