journal article·2020-01

Relieving the Photosensitivity of Organic Field‐Effect Transistors

Jie Liu, Longfeng Jiang, Jia Shi, Chunlei Li, Yanjun Shi, Jiahui Tan, Haiyang Li, Hui Jiang, Yuanyuan Hu, Xinfeng Liu, Junsheng Yu, Zhongming Wei, Lang Jiang, Wenping Hu

Advanced Materials· Volume 32· Issue 4
Publisher page

Abstract

Abstract It is generally believed that the photoresponse behavior of organic field‐effect transistors (OFETs) reflects the intrinsic property of organic semiconductors. However, this photoresponse hinders the application of OFETs in transparent displays as driven circuits due to the current instability resulting from the threshold voltage shift under light illumination. It is necessary to relieve the photosensitivity of OFETs to keep the devices stable. 2,6‐diphenyl anthracene thin‐film and single‐crystal OFETs are fabricated on different substrates, and it is found that the degree of molecular order in the conducting channels and the defects at the dielectric/semiconductor interface play important roles in determining the phototransistor performance. When highly ordered single‐crystal OFETs are fabricated on polymeric substrates with low defects, the photosensitivity (P) decreases by more than 105 times and the threshold voltage shift (ΔVT) is almost eliminated compared with the corresponding thin‐film OFETs. This phenomenon is further verified by using another three organic semiconductors for similar characterizations. The decreased P and ΔVT of OFETs ensure a good current stability for OFETs to drive organic light‐emitting diodes efficiently, which is essential to the application of OFETs in flexible and transparent displays.
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Research context

OpenAlex topics: Organic Electronics and Photovoltaics · Organic Light-Emitting Diodes Research · Conducting polymers and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic Solids Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China

School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu 610054 China

Division of Nanophotonics CAS Key Laboratory of Standardization and Measurement for Nanotechnology CAS Center for Excellence in Nanoscience National Center for Nanoscience and Technology Beijing 100190 China

Guangzhou China Ray Optoelectronic Materials Co., Ltd. Guangzhou 510663 China

School of Materials Science and Engineering Nanyang Technological University Singapore 639798 Singapore

Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low‐Dimensional Structural Physics and Devices School of Physics and Electronics Hunan University Changsha 410082 China

State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry School of Science Tianjin University Tianjin 300072 China

Funding

Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China · Chinese Academy of Sciences

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