Monolayer Field‐Effect Transistors of Nonplanar Organic Semiconductors with Brickwork Arrangement
Source abstract
Abstract
Twisted hexabenzoperylenes (HBPs) that are equipped with four methoxyl groups and two alkyl chains self-assemble into lamellar semiconductors with an unusual brickwork arrangement of twisted π-faces. As a result of this brickwork arrangement, through a dip-coating process, these HBPs easily form one-molecule-thick nanosheets that behave as p-type organic semiconductors in monolayer transistors with field-effect mobility of up to 0.076 cm2 V−1 s−1.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Molecular Junctions and Nanostructures · Conducting polymers and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemistry The Chinese University of Hong Kong Shatin, New Territories Hong Kong China
Department of Electronic Engineering The Chinese University of Hong Kong Shatin, New Territories Hong Kong China
References (32)
Show source-provided references
1. 10.1021/cr050140x10.1021/cr050140x ↗
2. 10.1021/cr100380z10.1021/cr100380z ↗
3. 10.1021/ja016245910.1021/ja0162459 ↗
4. 10.1021/ol016735610.1021/ol0167356 ↗
5. 10.1002/ange.20050214210.1002/ange.200502142 ↗
6. 10.1002/anie.20050214210.1002/anie.200502142 ↗
7. 10.1021/ja305435410.1021/ja3054354 ↗
8. 10.1002/adma.20100455410.1002/adma.201004554 ↗
9. CCDC 1016756 and CCDC 1016757 contain the supplementary crystallographic data for2aand2b respectively. These data can be obtained free of charge from The Cambridge Crystallographic Data Centre viawww.ccdc.cam.ac.uk/data_request/cif.
10. 10.1002/ange.20090421510.1002/ange.200904215 ↗
11. 10.1002/anie.20090421510.1002/anie.200904215 ↗
12. Because the unit cell of2bdiffers from that of2aby containing four molecules rather than two molecules the thickness of one nanosheet of2bis defined by the crystallographic plane of (020) instead of (010).
13. 10.1021/ja057078610.1021/ja0570786 ↗
14. 10.1103/PhysRevLett.92.10740210.1103/PhysRevLett.92.107402 ↗
15. 10.1002/ange.20130695310.1002/ange.201306953 ↗
16. 10.1002/anie.20130695310.1002/anie.201306953 ↗
17. 10.1002/(SICI)1521-3757(19991018)111:20<3224::AID-ANGE3224>3.0.CO;2-D10.1002/(SICI)1521-3757(19991018)111:20<3224::AID-ANGE3224>3.0.CO;2-D ↗
18. 10.1002/(SICI)1521-3773(19991018)38:20<3039::AID-ANIE3039>3.0.CO;2-510.1002/(SICI)1521-3773(19991018)38:20<3039::AID-ANIE3039>3.0.CO;2-5 ↗
19. 10.1021/ja064236010.1021/ja0642360 ↗
20. 10.1126/science.109778910.1126/science.1097789 ↗
21. 10.1073/pnas.050085210210.1073/pnas.0500852102 ↗
22. 10.1002/adma.20070214510.1002/adma.200702145 ↗
23. 10.1002/adma.20110047610.1002/adma.201100476 ↗
24. 10.1039/c2cp41557g10.1039/c2cp41557g ↗
25. 10.1002/adfm.20060017910.1002/adfm.200600179 ↗
26. 10.1021/ja044101z10.1021/ja044101z ↗
27. 10.1073/pnas.060167510310.1073/pnas.0601675103 ↗
28. 10.1038/nature0732010.1038/nature07320 ↗
29. 10.1021/am201078v10.1021/am201078v ↗
30. 10.1002/ange.20130035310.1002/ange.201300353 ↗
31. 10.1002/anie.20130035310.1002/anie.201300353 ↗
32. 10.1007/s00216-005-3390-210.1007/s00216-005-3390-2 ↗