DataVXAdvanced MaterialsPaper
journal article·2019-07

Enhancement of Heat Dissipation in Ultraviolet Light‐Emitting Diodes by a Vertically Oriented Graphene Nanowall Buffer Layer

Haina Ci, Hongliang Chang, Ruoyu Wang, Tongbo Wei, Yunyu Wang, Zhaolong Chen, Yuanwei Sun, Zhipeng Dou, Zhiqiang Liu, Jinmin Li, Peng Gao, Zhongfan Liu

Advanced Materials· Volume 31· Issue 29
Publisher page
Source abstract

Abstract

Abstract For III‐nitride‐based devices, such as high‐brightness light‐emitting diodes (LEDs), the poor heat dissipation of the sapphire substrate is deleterious to the energy efficiency and restricts many of their applications. Herein, the role of vertically oriented graphene (VG) nanowalls as a buffer layer for improving the heat dissipation in AlN films on sapphire substrates is studied. It is found that VG nanowalls can effectively enhance the heat dissipation between an AlN film and a sapphire substrate in the longitudinal direction because of their unique vertical structure and good thermal conductivity. Thus, an LED fabricated on a VG‐sapphire substrate shows a 37% improved light output power under a high injection current (350 mA) with an effective 3.8% temperature reduction. Moreover, the introduction of VG nanowalls does not degrade the quality of the AlN film, but instead promotes AlN nucleation and significantly reduces the epilayer strain that is generated during the cooling process. These findings suggest that the VG nanowalls can be a good buffer layer candidate in III‐nitride semiconductor devices, especially for improving the heat dissipation in high‐brightness LEDs.
Source: crossref · Quality: baseline

Research context

NanomaterialsElectronic materials

OpenAlex topics: GaN-based semiconductor devices and materials · Thermal properties of materials · Nanowire Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center for Nanochemistry (CNC) Beijing Science and Engineering Center for Nanocarbons Beijing National Laboratory for Molecular Sciences College of Chemistry and Molecular Engineering Academy for Advanced Interdisciplinary Studies Peking University Beijing 100871 P. R. China

State Key Laboratory of Solid‐State Lighting Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 P. R. China

Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 P. R. China

Electron Microscopy Laboratory, and International Center for Quantum Materials School of Physics Peking University Beijing 100871 P. R. China

Beijing Graphene Institute (BGI) Beijing 100095 P. R. China

Collaborative Innovation Centre of Quantum Matter Beijing 100871 P. R. China

Funding

National Natural Science Foundation of China · Beijing Municipal Science and Technology Commission · Natural Science Foundation of Beijing Municipality

References (49)

Show source-provided references
1. 10.1038/nphoton.2009.3210.1038/nphoton.2009.32 ↗
2. 10.1126/science.110871210.1126/science.1108712 ↗
3. 10.1063/1.344137310.1063/1.3441373 ↗
4. 10.1038/nature1097010.1038/nature10970 ↗
5. 10.1063/1.239702110.1063/1.2397021 ↗
6. 10.1038/nphoton.2007.29310.1038/nphoton.2007.293 ↗
7. 10.1143/APEX.5.03210110.1143/APEX.5.032101 ↗
8. 10.1109/JDT.2007.89438410.1109/JDT.2007.894384 ↗
9. 10.1109/TED.2010.205349210.1109/TED.2010.2053492 ↗
10. 10.1109/LED.2012.219209210.1109/LED.2012.2192092 ↗
11. 10.1063/1.233700710.1063/1.2337007 ↗
12. 10.1063/1.165133810.1063/1.1651338 ↗
13. 10.1063/1.476400710.1063/1.4764007 ↗
14. 10.1063/1.181063110.1063/1.1810631 ↗
15. 10.1038/nmat306410.1038/nmat3064 ↗
16. 10.1038/nature1145810.1038/nature11458 ↗
17. 10.1109/LED.2009.203411610.1109/LED.2009.2034116 ↗
18. 10.1021/nl202311v10.1021/nl202311v ↗
19. 10.1126/science.119540310.1126/science.1195403 ↗
20. 10.1038/s41467-018-04385-410.1038/s41467-018-04385-4 ↗
21. 10.1021/nl073187210.1021/nl0731872 ↗
22. 10.1039/C4NR04455J10.1039/C4NR04455J ↗
23. 10.1039/c3nr33449j10.1039/c3nr33449j ↗
24. 10.1007/s10853-014-8198-z10.1007/s10853-014-8198-z ↗
25. 10.7567/APEX.6.03210110.7567/APEX.6.032101 ↗
26. 10.1063/1.508111210.1063/1.5081112 ↗
27. 10.1103/PhysRevB.70.04541110.1103/PhysRevB.70.045411 ↗
28. 10.1063/1.150619510.1063/1.1506195 ↗
29. 10.1007/s12274-017-1839-110.1007/s12274-017-1839-1 ↗
30. 10.1021/nl015693b10.1021/nl015693b ↗
31. 10.1039/b311682d10.1039/b311682d ↗
32. 10.1016/j.carbon.2007.06.01710.1016/j.carbon.2007.06.017 ↗
33. 10.1063/1.220035310.1063/1.2200353 ↗
34. 10.7567/JJAP.56.08550610.7567/JJAP.56.085506 ↗
35. 10.1021/nn102915x10.1021/nn102915x ↗
36. 10.1021/nn901622910.1021/nn9016229 ↗
37. 10.1021/nl904196610.1021/nl9041966 ↗
38. 10.1109/LED.2013.226667010.1109/LED.2013.2266670 ↗
39. 10.1109/JDT.2005.85251010.1109/JDT.2005.852510 ↗
40. 10.1038/ncomms244810.1038/ncomms2448 ↗
41. 10.1002/pssa.20153262010.1002/pssa.201532620 ↗
42. 10.1088/0953-8984/14/38/20110.1088/0953-8984/14/38/201 ↗
43. 10.1103/PhysRevB.54.1774510.1103/PhysRevB.54.17745 ↗
44. 10.1002/sia.113410.1002/sia.1134 ↗
45. 10.1103/PhysRevB.63.12531310.1103/PhysRevB.63.125313 ↗
46. 10.1063/1.233558210.1063/1.2335582 ↗
47. 10.1063/1.150176210.1063/1.1501762 ↗
48. 10.1002/adma.20180160810.1002/adma.201801608 ↗
49. 10.1021/jacs.8b0387110.1021/jacs.8b03871 ↗