Mixed Lead–Tin Halide Perovskites for Efficient and Wavelength‐Tunable Near‐Infrared Light‐Emitting Diodes

Abstract Near‐infrared (NIR) light‐emitting diodes (LEDs), with emission wavelengths between 800 and 950 nm, are useful for various applications, e.g., night‐vision devices, optical communication, and medical treatments. Yet, devices using thin film materials like organic semiconductors and lead based colloidal quantum dots face certain fundamental challenges that limit the improvement of external quantum efficiency (EQE), making the search of alternative NIR emitters important for the community. In this work, efficient NIR LEDs with tunable emission from 850 to 950 nm, using lead–tin (Pb‐Sn) halide perovskite as emitters are demonstrated. The best performing device exhibits an EQE of 5.0% with a peak emission wavelength of 917 nm, a turn‐on voltage of 1.65 V, and a radiance of 2.7 W Sr⁻¹ m⁻² when driven at 4.5 V. The emission spectra of mixed Pb‐Sn perovskites are tuned either by changing the Pb:Sn ratio or by incorporating bromide, and notably exhibit no phase separation during device operation. The work demonstrates that mixed Pb‐Sn perovskites are promising next generation NIR emitters.