High Speed Epitaxial Perovskite Memory on Flexible Substrates

Saidur R. Bakaul; Claudy R. Serrao; Oukjae Lee; Zhongyuan Lu; Ajay Yadav; Carlo Carraro; Roya Maboudian; Ramamoorthy Ramesh; Sayeef Salahuddin

doi:10.1002/adma.201605699

journal article·2017-03

High Speed Epitaxial Perovskite Memory on Flexible Substrates

Saidur R. Bakaul, Claudy R. Serrao, Oukjae Lee, Zhongyuan Lu, Ajay Yadav, Carlo Carraro, Roya Maboudian, Ramamoorthy Ramesh, Sayeef Salahuddin

Advanced Materials· Volume 29· Issue 11

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Source abstract

Abstract

Single-crystal perovskite ferroelectric material is integrated at room temperature on a flexible substrate by the layer transfer technique. Two terminal memory devices fabricated with these materials exhibit faster switching speed, lower operating voltage, and superior endurance than other existing flexible counterparts. The research provides an avenue toward combining the rich functionality of charge and spin states, offered by the general class of complex oxides, onto a flexible platform.

Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: Perovskite Materials and Applications · Ferroelectric and Piezoelectric Materials · Advanced Memory and Neural Computing

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Electrical Engineering & Computer Sciences University of California Berkeley CA 94720 USA

Chemical and Biomolecular Engineering University of California Berkeley CA 94720 USA

Materials Science & Engineering University of California Berkeley CA 94720 USA

Material Science Division Lawrence Berkeley National Laboratory 1 Cyclotron Rd Berkeley CA 94720 USA

Funding

Office of Naval Research · Army Research Office · Air Force Office of Scientific Research · National Science Foundation

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