Tellurium Single‐Crystal Arrays by Low‐Temperature Evaporation and Crystallization
Source abstract
Abstract
Abstract Thermally evaporated tellurium possesses an intriguing crystallization behavior, where an amorphous to crystalline phase transition happens at near‐ambient temperature. However, a comprehensive understanding and delicate control of the crystallization process for the evaporated Te films is lacking. Here, the kinetics and dynamics of the crystallization of thermally evaporated Te films is visualized and modeled. Low‐temperature processing of highly crystalline tellurium films with large grain size and preferred out‐of‐plane orientation ((100) plane parallel to the surface) is demonstrated by controlling the crystallization process. Tellurium single crystals with a lateral dimension of up to 6 µm are realized on various substrates including glass and plastic. Field‐effect transistors based on 5 °C crystallized Te single grains (6‐nm‐thick) exhibit an average effective hole mobility of ≈100 cm2 V−1 s−1, and on/off current ratio of ≈3 × 104.
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Advanced Semiconductor Detectors and Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Electrical Engineering and Computer Sciences University of California at Berkeley Berkeley CA 94720 USA
Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley CA 94720 USA
Department of Materials Science and Engineering University of California at Berkeley Berkeley CA 94720 USA
The Molecular Foundry Lawrence Berkeley National Laboratory Berkeley CA 94720 USA
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