Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High‐Performance 2D Field Effect Transistors
Abstract
Research context
OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Graphene research and applications
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Affiliations
Department of Physics and Key Laboratory of Artificial Micro‐ and Nano‐structures of Ministry of Education Wuhan University Wuhan 430072 China
Department of Materials Science and Engineering National Chiao Tung University Hsin‐chu 30010 Taiwan
Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic Solids Institute of Chemistry Chinese Academy of Science Beijing 100190 China
Center for Advanced Quantum Studies Department of Physics Beijing Normal University Beijing 100875 China
Physics Department Xiamen University Xiamen 361005 China
Department of Physics and Materials Science City University of Hong Kong Tat Chee Avenue Kowloon Hong Kong SAR China
Funding
MOST · MOE · NSFC · Fundamental Research Funds for the Central Universities · National Natural Science Foundation of China · Chinese Academy of Sciences and the Strategic Priority Research Program of the Chinese Academy of Sciences · Ministry of Science and Technology