P‐Type 2D Semiconductors for Future Electronics

Abstract 2D semiconductors represent one of the best candidates to extend Moore's law for their superiorities, such as keeping high carrier mobility and remarkable gate‐control capability at atomic thickness. Complementary transistors and van der Waals junctions are critical in realizing 2D semiconductors‐based integrated circuits suitable for future electronics. N‐type 2D semiconductors have been reported predominantly for the strong electron doping caused by interfacial charge impurities and internal structural defects. By contrast, superior and reliable p‐type 2D semiconductors with holes as majority carriers are still scarce. Not only that, but some critical issues have not been adequately addressed, including their controlled synthesis in wafer size and high quality, defect and carrier modulation, optimization of interface and contact, and application in high‐speed and low‐power integrated devices. Here the material toolkit, synthesis strategies, device basics, and digital electronics closely related to p‐type 2D semiconductors are reviewed. Their opportunities, challenges, and prospects for future electronic applications are also discussed, which would be promising or even shining in the post‐Moore era.