A 2D Heterostructure‐Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing

Abstract The demand for economical and efficient data processing has led to a surge of interest in neuromorphic computing based on emerging two‐dimensional (2D) materials in recent years. As a rising van der Waals (vdW) p‐type Weyl semiconductor with many intriguing properties, tellurium (Te) has been widely used in advanced electronics/optoelectronics. However, its application in floating gate (FG) memory devices for information processing has never been explored. Herein, an electronic/optoelectronic FG memory device enabled by Te‐based 2D vdW heterostructure for multimodal reservoir computing (RC) is reported. When subjected to intense electrical/optical stimuli, the device exhibits impressive nonvolatile electronic memory behaviors including ≈10⁸ extinction ratio, ≈100 ns switching speed, >4000 cycles, >4000‐s retention stability, and nonvolatile multibit optoelectronic programmable characteristics. When the input stimuli weaken, the nonvolatile memory degrades into volatile memory. Leveraging these rich nonlinear dynamics, a multimodal RC system with high recognition accuracy of 90.77% for event‐type multimodal handwritten digit‐recognition is demonstrated.