High‐Hole‐Mobility Field‐Effect Transistors Based on Co‐Benzobisthiadiazole‐Quaterthiophene

Jian Fan; Jonathan D. Yuen; Weibin Cui; Jason Seifter; Ali Reza Mohebbi; Mingfeng Wang; Huiqiong Zhou; Alan Heeger; Fred Wudl

doi:10.1002/adma.201202195

journal article·2012-12-04

High‐Hole‐Mobility Field‐Effect Transistors Based on Co‐Benzobisthiadiazole‐Quaterthiophene

Jian Fan, Jonathan D. Yuen, Weibin Cui, Jason Seifter, Ali Reza Mohebbi, Mingfeng Wang, Huiqiong Zhou, Alan Heeger, Fred Wudl

Advanced Materials· Volume 24· Issue 46

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Source abstract

Abstract

High-mobility organic thin film transistors based on a benzobisthiadiazole-containing polymer are presented together with their morphological and optical properties. A very tight packing pattern of "edge-on" orientated polymer chains is observed in their thin films after annealing, and the hole mobility of this polymer is up to 2.5 cm(2) V(-1) s(-1) .

Source: openalex_inverted_index · Quality: baseline

Research context

Polymers Electronic materials Materials processing

OpenAlex topics: Organic Electronics and Photovoltaics · Conducting polymers and applications · Thin-Film Transistor Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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