p‐Type Semiconducting GeSe Combs by a Vaporization–Condensation–Recrystallization (VCR) Process

Novel p-type semiconductors can be found in these extraordinary comb structures. The GeSe combs are selectively formed by a vaporization–condensation–recrystallization (VCR) process using bulk GeSe powder as the precursor source. They have a flat body plate part and extended wire finger parts, both of which have identical crystal structures. The GeSe comb field-effect transistor device displays both p-type semiconducting and photo-switching behavior. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.