DataVXAdvanced MaterialsPaper
journal article·2014-08

Flexoelectric Control of Defect Formation in Ferroelectric Epitaxial Thin Films

Daesu Lee, Byung Chul Jeon, Aram Yoon, Yeong Jae Shin, Myang Hwan Lee, Tae Kwon Song, Sang Don Bu, Miyoung Kim, Jin‐Seok Chung, Jong‐Gul Yoon, Tae Won Noh

Advanced Materials· Volume 26· Issue 29
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Source abstract

Abstract

Flexoelectric control of defect formation and associated electronic function is demonstrated in ferroelectric BiFeO3 thin films. An intriguing, so far never demonstrated, effect of internal electric field (Eint ) on defect formation is explored by a means of flexoelectricity. Our study provides novel insight into defect engineering, as well as allows a pathway to design defect configuration and associated electronic function.
Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Multiferroics and related materials · Electronic and Structural Properties of Oxides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center for Correlated Electron Systems Institute for Basic Science (IBS) Seoul 151–747 Korea

Department of Physics and Astronomy Seoul National University Seoul 151–747 Korea

Department of Materials Science and Engineering Seoul National University Seoul 151–744 Korea

School of Nano and Advanced Materials Engineering Changwon National University Changwon 641–773 Korea

Department of Physics Chonbuk National University Jeonju 561–756 Korea

Department of Physics Soongsil University Seoul 156–743 Korea

Department of Physics University of Suwon Hwaseong Gyeonggi‐do 445–743 Korea

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