journal article·2015-03

Solution‐Processable, Low‐Voltage, and High‐Performance Monolayer Field‐Effect Transistors with Aqueous Stability and High Sensitivity

Hongliang Chen, Shaohua Dong, Meilin Bai, Nongyi Cheng, Hao Wang, Mingliang Li, Huiwen Du, Shuxin Hu, Yanlian Yang, Tieying Yang, Fan Zhang, Lin Gu, Sheng Meng, Shimin Hou, Xuefeng Guo

Advanced Materials· Volume 27· Issue 12
Publisher page

Abstract

Low-voltage, low-cost, high-performance monolayer field-effect transistors are demonstrated, which comprise a densely packed, long-range ordered monolayer spin-coated from core-cladding liquid-crystalline pentathiophenes and a solution-processed high-k HfO2 -based nanoscale gate dielectric. These monolayer field-effect transistors are light-sensitive and are able to function as reporters to convert analyte binding events into electrical signals with ultrahigh sensitivity (≈10 ppb).
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Semiconductor materials and devices · Organic Electronics and Photovoltaics

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center for Nanochemistry Beijing National Laboratory for Molecular Sciences State Key Laboratory for Structural Chemistry of Unstable and Stable Species College of Chemistry and Molecular Engineering Peking University Beijing 100871 PR China

Key Laboratory for the Physics and Chemistry of Nanodevices Department of Electronics Peking University Beijing 100871 PR China

National Center for Nanoscience and Technology Beijing 100190 PR China

Institute of Physics Chinese Academy of Sciences Beijing 100190 PR China

Shanghai Institute of Applied Physics Chinese Academy of Sciences Shanghai 201204 PR China

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