journal article·2019-04Open access

Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals

Yan Sun, Zishu Zhou, Zhen Huang, Jiangbin Wu, Liujiang Zhou, Yang Cheng, Jinqiu Liu, Chao Zhu, Maotao Yu, Peng Yu, Wei Zhu, Yue Liu, Jian Zhou, Bowen Liu, Hongguang Xie, Yi Cao, Hai Li, Xinran Wang, Kaihui Liu, Xiaoyong Wang, Jianpu Wang, Lin Wang, Wei Huang

Advanced Materials· Volume 31· Issue 17

Abstract

Abstract To explore new constituents in two‐dimensional (2D) materials and to combine their best in van der Waals heterostructures is in great demand as being a unique platform to discover new physical phenomena and to design novel functionalities in interface‐based devices. Herein, PbI 2 crystals as thin as a few layers are synthesized, particularly through a facile low‐temperature solution approach with crystals of large size, regular shape, different thicknesses, and high yields. As a prototypical demonstration of band engineering of PbI 2 ‐based interfacial semiconductors, PbI 2 crystals are assembled with several transition metal dichalcogenide monolayers. The photoluminescence of MoS 2 is enhanced in MoS 2 /PbI 2 stacks, while a dramatic photoluminescence quenching of WS 2 and WSe 2 is revealed in WS 2 /PbI 2 and WSe 2 /PbI 2 stacks. This is attributed to the effective heterojunction formation between PbI 2 and these monolayers; type I band alignment in MoS 2 /PbI 2 stacks, where fast‐transferred charge carriers accumulate in MoS 2 with high emission efficiency, results in photoluminescence enhancement, and type II in WS 2 /PbI 2 and WSe 2 /PbI 2 stacks, with separated electrons and holes suitable for light harvesting, results in photoluminescence quenching. The results demonstrate that MoS 2 , WS 2 , and WSe 2 monolayers with similar electronic structures show completely distinct light–matter interactions when interfacing with PbI 2 , providing unprecedented capabilities to engineer the device performance of 2D heterostructures.
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Research context

OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing Tech University (NanjingTech) 30 South Puzhu Road Nanjing 211816 China

Ming Hsieh Department of Electrical Engineering University of Southern California Los Angeles CA 90089 USA

Center for Nonlinear Studies and Theoretical Division Los Alamos National Laboratory Los Alamos NM 87545 USA

State Key Laboratory for Mesoscopic Physics School of Physics Department Peking University Beijing 100871 China

National Laboratory of Solid State Microstructures School of Physics Nanjing University Nanjing 210093 China

Center for Programmable Materials School of Materials Science and Engineering Nanyang Technological University Singapore 639798 Singapore

School of Materials Science and Engineering Sun Yat‐sen University Guangzhou 510275 China

National Laboratory of Solid‐State Microstructures School of Electronic Science and Engineering Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 China

Shaanxi Institute of Flexible Electronics (SIFE) Northwestern Polytechnical University (NPU) 127 West Youyi Road Xi'an 710072 Shaanxi China

Funding

National Basic Research Program of China · National Natural Science Foundation of China · Natural Science Foundation of Jiangsu Province · U.S. Department of Energy

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