Transparent, High‐Performance Thin‐Film Transistors with an InGaZnO/Aligned‐SnO2‐Nanowire Composite and their Application in Photodetectors
Source abstract
Abstract
A high mobility of 109.0 cm(2) V(-1) s(-1) is obtained by thin-film transistors (TFTs) comprising a composite made by aligning SnO2 nanowires (NWs) in amorphous InGaZnO (a-IGZO) thin films. This composite TFT reaches an on-current density of 61.4 μA μm(-1) with a 10 μm channel length. Its performance surpasses that of single-crystalline InGaZnO and is comparable with that of polycrystalline silicon.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics and Key Laboratory of Artificial Micro‐ and Nano‐structures of Ministry of Education Wuhan University Wuhan 430072 China
Department of Electronic & Computer Engineering The Hong Kong University of Science & Technology Hong Kong SAR China
National Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China
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