DataVXAdvanced MaterialsPaper
journal article·2020-11

Air‐Stable Low‐Symmetry Narrow‐Bandgap 2D Sulfide Niobium for Polarization Photodetection

Yang Wang, Peisong Wu, Zhen Wang, Man Luo, Fang Zhong, Xun Ge, Kun Zhang, Meng Peng, Yan Ye, Qing Li, Haonan Ge, Jiafu Ye, Ting He, Yunfeng Chen, Tengfei Xu, Chenhui Yu, Yueming Wang, Zhigao Hu, Xiaohao Zhou, Chongxin Shan, Mingsheng Long, Peng Wang, Peng Zhou, Weida Hu

Advanced Materials· Volume 32· Issue 45
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Source abstract

Abstract

Abstract Low‐symmetry 2D materials with unique anisotropic optical and optoelectronic characteristics have attracted a lot of interest in fundamental research and manufacturing of novel optoelectronic devices. Exploring new and low‐symmetry narrow‐bandgap 2D materials will be rewarding for the development of nanoelectronics and nano‐optoelectronics. Herein, sulfide niobium (NbS3), a novel transition metal trichalcogenide semiconductor with low‐symmetry structure, is introduced into a narrowband 2D material with strong anisotropic physical properties both experimentally and theoretically. The indirect bandgap of NbS3 with highly anisotropic band structures slowly decreases from 0.42 eV (monolayer) to 0.26 eV (bulk). Moreover, NbS3 Schottky photodetectors have excellent photoelectric performance, which enables fast photoresponse (11.6 µs), low specific noise current (4.6 × 10−25 A2 Hz−1), photoelectrical dichroic ratio (1.84) and high‐quality reflective polarization imaging (637 nm and 830 nm). A room‐temperature specific detectivity exceeding 107 Jones can be obtained at the wavelength of 3 µm. These excellent unique characteristics will make low‐symmetry narrow‐bandgap 2D materials become highly competitive candidates for future anisotropic optical investigations and mid‐infrared optoelectronic applications.
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Research context

NanomaterialsElectronic materials

OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China

University of Chinese Academy of Sciences Beijing 100049 China

Key Laboratory of Space Active Opto‐Electronics Technology and State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China

Jiangsu Key Laboratory of ASIC Design Nantong University Nantong Jiangsu 226019 China

Technical Center for Multifunctional Magneto‐Optical Spectroscopy (Shanghai) Department of Materials School of Physics and Electronic Science East China Normal University Shanghai 200241 China

Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou 310024 China

Henan Key Laboratory of Diamond Optoelectronic Materials and Devices School of Physics and Engineering Zhengzhou University Zhengzhou 450001 China

Funding

National Natural Science Foundation of China · Science and Technology Commission of Shanghai Municipality · National Basic Research Program of China · Shanghai Education Development Foundation · Shanghai Municipal Education Commission · China Postdoctoral Science Foundation

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