journal article·2009-08-14

Nonuniform Nanowire Doping Profiles Revealed by Quantitative Scanning Photocurrent Microscopy

Jonathan E. Allen, Daniel E. Perea, Eric R. Hemesath, Lincoln J. Lauhon

Advanced Materials· Volume 21· Issue 30
Publisher page

Abstract

Scanning photocurrent microscopy (SPCM) is used in semiconductor nanowire devices to establish quantitative potential profiles correlated with nonuniformities in electrical resistivity. Surface doping leads to a nonuniform axial photocurrent (a). Surface etching improves the uniformity of the local photocurrent (b) and reduces the radial and axial carrier concentration gradients (c, blue curve after etching).
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Research context

OpenAlex topics: Nanowire Synthesis and Applications · Force Microscopy Techniques and Applications · Advancements in Semiconductor Devices and Circuit Design

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