Giant Photoamplification in Indirect‐Bandgap Multilayer MoS₂ Phototransistors with Local Bottom‐Gate Structures

Junyeon Kwon; Young Ki Hong; Gyuchull Han; Inturu Omkaram; Woong Choi; Sunkook Kim; Youngki Yoon

doi:10.1002/adma.201404367

journal article·2015-04

Giant Photoamplification in Indirect‐Bandgap Multilayer MoS₂ Phototransistors with Local Bottom‐Gate Structures

Junyeon Kwon, Young Ki Hong, Gyuchull Han, Inturu Omkaram, Woong Choi, Sunkook Kim, Youngki Yoon

Advanced Materials· Volume 27· Issue 13

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Source abstract

Abstract

Local-gate multilayer MoS2 phototransistors exhibit a photoresponsivity of up to 342.6 A W(-1) , which is higher by 3 orders of magnitude than that of global-gate multilayer MoS2 phototransistors. These simulations indicate that the gate underlap is critical for the enhancement of the photoresponsivity. These results suggest that high photoresponsivity can be achieved in indirect-bandgap multilayer MoS2 phototransistors by optimizing the optoelectronic design.

Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · Nanowire Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Multi‐Functional Nano/Bio Electronics Lab Kyung Hee University Gyeonggi 446‐701 South Korea

Department of Electrical and Computer Engineering and Waterloo Institute for Nanotechnology (WIN) University of Waterloo Waterloo ON N2L 3G1 Canada

School of Advanced Materials Engineering Kookmin University Seoul 136‐702 South Korea

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