DataVXAdvanced MaterialsPaper
journal article·2018-07

MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit

Xingqiang Liu, Renrong Liang, Guoyun Gao, Caofeng Pan, Chunsheng Jiang, Qian Xu, Jun Luo, Xuming Zou, Zhenyu Yang, Lei Liao, Zhong Lin Wang

Advanced Materials· Volume 30· Issue 28
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Source abstract

Abstract

Abstract The Boltzmann distribution of electrons induced fundamental barrier prevents subthreshold swing (SS) from less than 60 mV dec‐1 at room temperature, leading to high energy consumption of MOSFETs. Herein, it is demonstrated that an aggressive introduction of the negative capacitance (NC) effect of ferroelectrics can decisively break the fundamental limit governed by the “Boltzmann tyranny”. Such MoS2 negative‐capacitance field‐effect transistors (NC‐FETs) with self‐aligned top‐gated geometry demonstrated here pull down the SS value to 42.5 mV dec‐1, and simultaneously achieve superior performance of a transconductance of 45.5 μS μm and an on/off ratio of 4 × 106 with channel length less than 100 nm. Furthermore, the inserted HfO2 layer not only realizes a stable NC gate stack structure, but also prevents the ferroelectric P(VDF‐TrFE) from fatigue with robust stability. Notably, the fabricated MoS2 NC‐FETs are distinctly different from traditional MOSFETs. The on‐state current increases as the temperature decreases even down to 20 K, and the SS values exhibit nonlinear dependence with temperature due to the implementation of the ferroelectric gate stack. The NC‐FETs enable fundamental applications through overcoming the Boltzmann limit in nanoelectronics and open up an avenue to low‐power transistors needed for many exciting long‐endurance portable consumer products.
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Research context

NanomaterialsElectronic materials

OpenAlex topics: Ferroelectric and Negative Capacitance Devices · MXene and MAX Phase Materials · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

CAS Center for Excellence in Nanoscience Beijing Key Laboratory of Micro‐nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 P. R. China

School of Nanoscience and Technology University of Chinese Academy of Sciences Beijing 100049 P. R. China

School of Physics and Electronics Hunan University Changsha 410082 China

Tsinghua National Laboratory for Information Science and Technology Institute of Microelectronics Tsinghua University Beijing 100084 China

Center on Nanoenergy Research School of Physical Science and Technology Guangxi University Nanning Guangxi 530004 P. R. China

Center for Electron Microscopy TUT‐FEI Joint Laboratory Tianjin Key Laboratory of Advanced Functional Porous Materials Institute for New Energy Materials & Low‐Carbon Technologies School of Materials Science and Engineering Tianjin University of Technology Tianjin 300384 China

School of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332‐0245 USA

Funding

National Natural Science Foundation of China · Natural Science Foundation of Beijing Municipality

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