journal article·2023-06Open access

Managing Interfacial Defects and Carriers by Synergistic Modulation of Functional Groups and Spatial Conformation for High‐Performance Perovskite Photovoltaics Based on Vacuum Flash Method

Deyu Gao, Ru Li, Xihan Chen, Cong Chen, Chenglin Wang, Boxue Zhang, Mengjia Li, Xueni Shang, Xuemeng Yu, Shaokuan Gong, Thierry Pauporté, Hua Yang, Liming Ding, JianXin Tang, Jiangzhao Chen

Advanced Materials· Volume 35· Issue 23

Abstract

Abstract Interfacial nonradiative recombination loss is a huge barrier to advance the photovoltaic performance. Here, one effective interfacial defect and carrier dynamics management strategy by synergistic modulation of functional groups and spatial conformation of ammonium salt molecules is proposed. The surface treatment with 3‐ammonium propionic acid iodide (3‐APAI) does not form 2D perovskite passivation layer while the propylammonium ions and 5‐aminopentanoic acid hydroiodide post‐treatment lead to the formation of 2D perovskite passivation layers. Due to appropriate alkyl chain length, theoretical and experimental results manifest that COOH and NH3+ groups in 3‐APAI molecules can form coordination bonding with undercoordinated Pb2+ and ionic bonding and hydrogen bonding with octahedron PbI64−, respectively, which makes both groups be simultaneously firmly anchored on the surface of perovskite films. This will strengthen defect passivation effect and improve interfacial carrier transport and transfer. The synergistic effect of functional groups and spatial conformation confers 3‐APAI better defect passivation effect than 2D perovskite layers. The 3‐APAI‐modified device based on vacuum flash technology achieves an alluring peak efficiency of 24.72% (certified 23.68%), which is among highly efficient devices fabricated without antisolvents. Furthermore, the encapsulated 3‐APAI‐modified device degrades by less than 4% after 1400 h of continuous one sun illumination.
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Research context

OpenAlex topics: Perovskite Materials and Applications · Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Macao Institute of Materials Science and Engineering (MIMSE) Faculty of Innovation Engineering Macau University of Science and Technology Taipa Macao SAR 999078 P. R. China

State Key Laboratory of Reliability and Intelligence of Electrical Equipment School of Materials Science and Engineering Hebei University of Technology Tianjin 300401 P. R. China

Key Laboratory of Optoelectronic Technology & Systems (Ministry of Education) College of Optoelectronic Engineering Chongqing University Chongqing 400044 P. R. China

SUSTech Energy Institute for Carbon Neutrality Department of Mechanical and Energy Engineering Southern University of Science and Technology Shenzhen Guangdong 518055 P. R. China

Chimie ParisTech, PSL Research University, CNRS Institut de Recherche de Chimie Paris (IRCP) UMR8247 11 rue P. et M. Curie F‐75005 Paris France

Center for Excellence in Nanoscience (CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS) National Center for Nanoscience and Technology Beijing 100190 P. R. China

Institute of High Energy Physics Chinese Academy of Sciences (CAS) Beijing 100049 P. R. China

Collaborative Innovation Center of Suzhou Nano Science & Technology Institute of Functional Nano & Soft Materials (FUNSOM) Soochow University Suzhou Jiangsu 215123 P. R. China

Funding

National Natural Science Foundation of China · Natural Science Foundation of Hebei Province · State Key Laboratory of Reliability and Intelligence of Electrical Equipment · Fundamental Research Funds for the Central Universities · Natural Science Foundation of Chongqing

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