Ultrahigh Mobility in Solution‐Processed Solid‐State Electrolyte‐Gated Transistors

A new concept of a high-capacitance polymeric dielectric based on high-k polymer and ion gel blends is reported. This solid-state electrolyte gate insulator enables remarkable field-effect mobilities exceeding 10 cm2 V−1 s−1 for common polymer and other semiconductor families at VG ≤ 2 V owing to high areal capacitance (>4 µF cm−2) from combined polarization of CF interface dipoles and electrical-double-layer formation. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.