Low‐Voltage Transistor Employing a High‐Mobility Spin‐Coated Chalcogenide Semiconductor
Source abstract
Abstract
In2Se3 thin films are spin-coated using a hydrazinium-precursor approach to yield thin-film transistors (TFTs, see Figure). The highly toxic and explosive solvent hydrazine, previously employed for spin-coating SnS2–xSex films, has also been replaced with a more convenient solvent mixture of ethanolamine and dimethyl sulfoxide. Low-voltage operation (< 8 V) of TFTs based on spin-coated In2Se3 yields mobilities as high as 16 cm2 V–1 s–1 and on/off ratios of 106.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Perovskite Materials and Applications
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