Ultra‐Flexible, “Invisible” Thin‐Film Transistors Enabled by Amorphous Metal Oxide/Polymer Channel Layer Blends

Ultra-flexible and transparent metal oxide transistors are developed by doping In2O3 films with poly(vinylphenole) (PVP). By adjusting the In2O3:PVP weight ratio, crystallization is frustrated, and conducting pathways for efficient charge transport are maintained. In2O3:5%PVP-based transistors exhibit mobilities approaching 11 cm2 V−1 s−1 before, and retain up to ca. 90% performance after 100 bending/relaxing cycles at a radius of 10 mm. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.