journal article·2024-05

Sensitive Organic Photodetectors With Spectral Response up to 1.3 µm Using a Quinoidal Molecular Semiconductor

Bingyan Yin, Xia Zhou, Yuyang Li, Gangjian Hu, Wenkui Wei, Mingqun Yang, Seonghun Jeong, Wanyuan Deng, Baoqi Wu, Yunhao Cao, Bo Huang, Langheng Pan, Xiaoru Yang, Zhenyu Fu, Yanjun Fang, Liang Shen, Changduk Yang, Hongbin Wu, Linfeng Lan, Fei Huang, Yong Cao, Chunhui Duan

Advanced Materials· Volume 36· Issue 19
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Abstract

Abstract Detecting short‐wavelength infrared (SWIR) light has underpinned several emerging technologies. However, the development of highly sensitive organic photodetectors (OPDs) operating in the SWIR region is hindered by their poor external quantum efficiencies (EQEs) and high dark currents. Herein, the development of high‐sensitivity SWIR‐OPDs with an efficient photoelectric response extending up to 1.3 µm is reported. These OPDs utilize a new ultralow‐bandgap molecular semiconductor featuring a quinoidal tricyclic electron‐deficient central unit and multiple non‐covalent conformation locks. The SWIR‐OPD achieves an unprecedented EQE of 26% under zero bias and an even more impressive EQE of up to 41% under a –4 V bias at 1.10 µm, effectively pushing the detection limit of silicon photodetectors. Additionally, the low energetic disorder and trap density in the active layer lead to significant suppression of thermal‐generation carriers and dark current, resulting in excellent detectivity (Dsh*) exceeding 1013 Jones from 0.50 to 1.21 µm and surpassing 1012 Jones even at 1.30 µm under zero bias, marking the highest achievements for OPDs beyond the silicon limit to date. Validation with photoplethysmography measurements, a spectrometer prototype in the 0.35–1.25 µm range, and image capture under 1.20 µm irradiation demonstrate the extensive applications of this SWIR‐OPD.
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Research context

OpenAlex topics: Organic Electronics and Photovoltaics · Luminescence and Fluorescent Materials · Perovskite Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Polymer Optoelectronic Materials and Devices Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510640 P. R. China

School of New Energy Ningbo University of Technology Ningbo 315336 P. R. China

State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310058 P. R. China

State Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering International Center of Future Science Jilin University Changchun 130015 P. R. China

Department of Energy Engineering School of Energy and Chemical Engineering Low Dimensional Carbon Materials Center Perovtronics Research Center Ulsan National Institute of Science and Technology Ulsan 44919 South Korea

Funding

National Natural Science Foundation of China · Basic and Applied Basic Research Foundation of Guangdong Province · Guangdong Provincial Introduction of Innovative Research and Development Team · Science and Technology Planning Project of Guangdong Province

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