Highly Stable and Imperceptible Electronics Utilizing Photoactivated Heterogeneous Sol‐Gel Metal–Oxide Dielectrics and Semiconductors
Source abstract
Abstract
Incorporation of Zr into an AlOx matrix generates an intrinsically activated ZAO surface enabling the formation of a stable semiconducting IGZO film and good interfacial properties. Photochemically annealed metal-oxide devices and circuits with the optimized sol-gel ZAO dielectric and IGZO semiconductor layers demonstrate the high performance and electrically/mechanically stable operation of flexible electronics fabricated via a low-temperature solution process.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties · Advanced Sensor and Energy Harvesting Materials · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Electrical and Electronic Engineering Chung‐Ang University Seoul South Korea
Department of Chemistry Chung‐Ang University Seoul South Korea
School of Electrical and Electronic Engineering Yonsei University Seoul South Korea
Center for Opto‐Electronic Convergence Systems Korea Institute of Science and Technology (KIST) Seoul South Korea
School of Advanced Materials Science and Engineering and SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon South Korea
Funding
Korea government (MSIP)
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