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journal article·2017-01Open access

Metal–Semiconductor Phase‐Transition in WSe2(1‐x)Te2x Monolayer

Peng Yu, Junhao Lin, Linfeng Sun, Quang Luan Le, Xuechao Yu, Guanhui Gao, Chuang‐Han Hsu, Di Wu, Tay‐Rong Chang, Qingsheng Zeng, Fucai Liu, Qi Jie Wang, Horng‐Tay Jeng, Hsin Lin, Achim Trampert, Zexiang Shen, Kazu Suenaga, Zheng Liu

Advanced Materials· Volume 29· Issue 4
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Source abstract

Abstract

A metal-semiconductor phase transition in a ternary transition metal dichalcogenide (TMD) monolayer is achieved by alloying Te into WSe2 (WSe2(1−x)Te2x, where x = 0%–100%). The optical bandgaps of the WSe2(1−x)Te2x monolayer can be tuned from 1.67 to 1.44 eV (2H semiconductor) and drops to 0 eV (1Td metal), which opens up an exciting opportunity in functional electronic/optoelectronic devices. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
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Research context

Metals & alloysElectronic materials

OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Advanced Photocatalysis Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Materials Science and Engineering Nanyang Technological University 50 Nanyang Avenue Singapore 639798 Singapore

National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba 305‐8565 Japan

School of Physical and Mathematical Sciences Nanyang Technological University 50 Nanyang Avenue Singapore 639798 Singapore

School of Electrical and Electronic Engineering Nanyang Technological University 50 Nanyang Avenue Singapore 639798 Singapore

Paul‐Drude‐Institut für Festkörperelektronik Leibniz‐Institut im Forschungsverbund Berlin Hausvogteiplatz 5‐7 10117 Berlin Germany

Department of Physics National University of Singapore 117542 Singapore

Department of Physics National Tsing Hua University Hsinchu 30013 Taiwan

Institute of Physics Academia Sinica Taipei 11529 Taiwan

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