Significant Enhancement of Infrared Photodetector Sensitivity Using a Semiconducting Single‐Walled Carbon Nanotube/C₆₀ Phototransistor

A highly sensitive single-walled carbon nanotube/C60-based infrared photo­transistor is fabricated with a responsivity of 97.5 A W−1 and detectivity of 1.17 × 109 Jones at 1 kHz under a source/drain bias of –0.5 V. The much improved performance is enabled by this unique device architecture that enables a high photoconductive gain of ≈104 with a response time of several milliseconds. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.