journal article·2015-04Open access

Band‐Like Electron Transport with Record‐High Mobility in the TCNQ Family

Yulia Krupskaya, Marco Gibertini, Nicola Marzari, Alberto F. Morpurgo

Advanced Materials· Volume 27· Issue 15

Abstract

The occurrence of extremely pronounced band-like transport with very high electron mobility in fluorinated tetracyanoquinodimethane (F2-TCNQ) single-crystal field-effect transistors is discovered. This finding identifies the Fx-TCNQ family as a paradigm to investigate the fundamental aspects of electronic transport in organic crystals. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Organic and Molecular Conductors Research · Organic Electronics and Photovoltaics · Perovskite Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Quantum Matter Physics (DQMP) University of Geneva 24 quai Ernest‐Ansermet CH‐1211 Geneva Switzerland

Theory and Simulation of Materials (THEOS) and National Center for Computational Design and Discovery of Novel Materials (MARVEL) École Polytechnique Fédérale de Lausanne MXC 340 (Bâtiment MXC)Station 12 CH‐1015 Lausanne Switzerland

References (25)

Show source-provided references
1. 10.1103/PhysRevLett.93.08660210.1103/PhysRevLett.93.086602 ↗
2. 10.1103/PhysRevLett.96.08660110.1103/PhysRevLett.96.086601 ↗
3. 10.1103/PhysRevB.80.24530510.1103/PhysRevB.80.245305 ↗
4. 10.1002/adma.20100268210.1002/adma.201002682 ↗
5. 10.1016/j.cap.2012.05.04610.1016/j.cap.2012.05.046 ↗
6. 10.1002/adma.20110396010.1002/adma.201103960 ↗
7. 10.1021/jp402250v10.1021/jp402250v ↗
8. 10.1002/adma.20130413010.1002/adma.201304130 ↗
9. 10.1103/PhysRevLett.103.26660110.1103/PhysRevLett.103.266601 ↗
10. 10.1002/ijch.20140004710.1002/ijch.201400047 ↗
11. 10.1107/S010827010100703X10.1107/S010827010100703X ↗
12. 10.1016/S0379-6779(02)00467-810.1016/S0379-6779(02)00467-8 ↗
13. 10.1063/1.12120510.1063/1.121205 ↗
14. 10.1002/adma.20040101710.1002/adma.200401017 ↗
15. 10.1038/nmat220510.1038/nmat2205 ↗
16. Silinsh E. A. · 1994
17. 10.1021/cr040084k10.1021/cr040084k ↗
18. 10.1103/PhysRevB.86.24520110.1103/PhysRevB.86.245201 ↗
19. 10.1021/ja809848y10.1021/ja809848y ↗
20. 10.1002/adma.20110498710.1002/adma.201104987 ↗
21. 10.1002/adma.20130339210.1002/adma.201303392 ↗
22. 10.1021/ja210430b10.1021/ja210430b ↗
23. 10.1103/PhysRevB.82.08110110.1103/PhysRevB.82.081101 ↗
24. 10.1002/adma.20040186610.1002/adma.200401866 ↗
25. 10.1103/PhysRevLett.104.15640110.1103/PhysRevLett.104.156401 ↗