Controlling Nucleation and Crystallization in Solution‐Processed Organic Semiconductors for Thin‐Film Transistors

Three orders of magnitude is the range over which the grain size (see figure) can be tuned in solution-processed organic semiconductor thin films for TFTs. Fluorinated triethylsilyl anthradithiophene (FTES-ADT) is added in fractional amounts to seed crystallization of TES-ADT. Correlation between device mobility and grain size in the active layer is described by a composite mobility model that assumes charge-carrier traps are located at grain boundaries. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.