A Simple Intermediate Approach of Sputter Deposition at Room Temperature for Improving the Stability of a-InGaZnO Thin Film Transistors
Source abstract
Abstract
Amorphous InGaZnO (a-InGaZnO) thin film transistors (TFTs) with stability and low-temperature deposition are important challenges for their application in flexible electronics. Herein, a-InGaZnO films were successfully obtained throughout the whole process in the room-temperature sputtering system. An intermediate nitrogen treatment a-InGaZnO film link contributed to high performance a-InGaZnO TFTs. The current switching ratio of the optimal nitrogen treatment transistor is close to 107, the field-effect mobility (µFE) is 11.7 cm2/Vs and threshold voltage (VTH) is − 0.12 V, respectively. And the 4-day threshold voltage offset (ΔVTH) is reduced from 12.98 to 4.92 V. The improved electrical properties may be attributed to the reduction of defect concentration and average interfacial trap density due to nitrogen occupation of oxygen vacancies (VO). Graphical Abstract
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (26)
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