Mn doping effect on the ferroelectric domain structure of BaTiO3 thin films
Source abstract
Abstract
We comparatively investigated the ferroelectric domain structure of BaTiO3 (BTO) and Mn-doped BTO epitaxial thin films grown on Pt/MgO substrates by pulsed laser deposition. The advantages of Mn doping included enhanced ferroelectric polarization, low leakage current, and ferromagnetism. Piezoresponse force microscopy revealed that the increased domain wall energy associated with Mn doping led to an increase in the ferroelectric domain structure.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Multiferroics and related materials · Magnetic and transport properties of perovskites and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (23)
Show source-provided references
1. R. Ramesh and N. A. Spaldin, Nat. Mater. 6, 21 (2007).10.1038/nmat1805 ↗
2. J. Ma, J. Hu, Z. Li, and C. W. Nan, Adv. Mater. 23, 1062 (2011).10.1002/adma.201003636 ↗
3. M. Bichurin, V. Petrov, S. Priya, and A. Bhalla, Adv. Condens. Matter. Phys. 2012, 3 (2012).
4. J. F. Scott, NPG Asia Mater. 5, e72 (2013).10.1038/am.2013.58 ↗
5. D. I. Khomskii, J. Magn. Magn. Mater. 306, 1 (2006).10.1016/j.jmmm.2006.01.238 ↗
6. H. Chiba, T. Atou, and Y. Syono, J. Solid State Chem. 132, 139 (1997).10.1006/jssc.1997.7432 ↗
7. J. Wang, J. B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, N. A. Spaldin, K. M. Rabe, M. Wuttig, and R. Ramesh, Science 299, 1719 (2003).10.1126/science.1080615 ↗
8. J. Y. Son, B. G. Kim, C. H. Kim, and J. H. Cho, Appl. Phys. Lett. 84, 4971 (2004).10.1063/1.1762974 ↗
9. S. Ryu, J. Y. Kim, Y. H. Shin, B. G. Park, J. Y. Son, and H. M. Jang, Chem. Mater. 21, 5050 (2009).10.1021/cm9014496 ↗
10. Y. H. Lin, S. Zhang, C. Deng, Y. Zhang, X. Wang, and C. W. Nan, Appl. Phys. Lett. 92 (2008).
11. Y. H. Lin, J. Yuan, S. Zhang, Y. Zhang, J. Liu, Y. Wang, and C. W. Nan, Appl. Phys. Lett. 95 (2009).
12. B. Xu, K. B. Yin, J. Lin, Y. D. Xia, X. G. Wan, J. Yin, X. J. Bai, J. Du, and Z. G. Liu, Phys. Rev. B. 79, 134109 (2009).10.1103/PhysRevB.79.134109 ↗
13. H. Nakayama and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 40, L1355 (2001).10.1143/JJAP.40.L1355 ↗
14. B. F. Ding and S. Q. Zhou, Chinese Phys. B. 20, 127701 (2011).10.1088/1674-1056/20/12/127701 ↗
15. S. Pattanayak, R. N. P. Choudhary, and P. Das, Electron. Mater. Lett. 10, 165 (2014).10.1007/s13391-013-3050-1 ↗
16. A. Filippetti and N. A. Hill, Phys. Rev. B. 65, 195120 (2002).10.1103/PhysRevB.65.195120 ↗
17. K. J. Choi, M. Biegalski, Y. L. Li, A. Sharan, J. Schubert, R. Uecker, P. Reiche, Y. B. Chen, X. Q. Pan, V. Gopalan, L. Q. Chen, D. G. Schlom, and C. B. Eom, Science 306, 1005 (2004).10.1126/science.1103218 ↗
18. J. Y. Son and Y. S. Shin, Thin Solid Films 520, 3017 (2012).10.1016/j.tsf.2011.12.046 ↗
19. F. C. Chiu, Adv. Mater. Sci. Eng. 2014, 18 (2014).
20. T. Mihara and H. Watanabe, Jpn. J. Appl. Phys. 34, 5664 (1995).10.1143/JJAP.34.5664 ↗
21. G. Catalan, H. Béa, S. Fusil, M. Bibes, P. Paruch, A. Barthélémy, and J. F. Scott, Phys. Rev. Lett. 100, 027602 (2008).10.1103/PhysRevLett.100.027602 ↗
22. W. H. Kim and J. Son, Electron. Mater. Lett. 10, 107 (2014).10.1007/s13391-013-3120-4 ↗
23. W. Y. Shih, W. H. Shih, and I. A. Aksay, Phys. Rev. B. 50, 15575 (1994).10.1103/PhysRevB.50.15575 ↗