Characterization of the p-type Sn1−x Mn x O2 oxide semiconductor nanoparticles by Sol-Gel method

This paper reports the properties of p-type oxide semiconductor Sn1−x Mn x O2 (MTO) nanoparticles with a low doping concentration of Mn (0 ≤ x ≤ 0.05) prepared with a sol-gel method. X-ray diffraction (XRD) results show that single-phase rutile MTO was obtained for x up to 0.03. The samples have particle average size of about 100 nm, which was confirmed with scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The compositional changes and electrical properties of the MTO nanoparticles were characterized by using x-ray photoelectron spectroscopy (XPS) and Hall effect measurements. Mn3+ cations are incorporated into the rutile SnO2 lattice. P-type conduction which is arisen from the substitution of Mn3+ to Sn4+ lattice was demonstrate by Hall data. These compositions have hole carrier concentrations in the range 2.26∼8.53 × 1016 cm−3 and exhibit Hall mobilities in the range 0.8∼4.1 cm2/Vs. The mobility of MTO decreases as the Mn content increases due to the doping effect. A transparent, ptype TFT device can be fabricated with this composition.