Static induction transistor using TaN thin film as gate electrode for high-performance application
Source abstract
Abstract
In this study, static induction transistor (SIT) using TaN thin film as gate electrode was fabricated and the characteristics of this device were investigated. The electrical characteristics showed that the drain-source current was controlled by the bias voltage that applied to the TaN gate electrode. The typical SIT operations with non-saturation property and a transition from linear to nonlinear behavior were observed in the drainsource I–V characteristics. Furthermore, compared with the traditional devices, this SIT device can obtain a high working current (∼5 mA) at a low driving voltage (∼3 V) with a small threshold voltage (∼1 V), showing its high potential for high current and low voltage application.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Thin-Film Transistor Technologies · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (17)
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