Nonvolatile ferroelectric memory based on PbTiO3 gated single-layer MoS2 field-effect transistor
Source abstract
Abstract
We fabricated ferroelectric non-volatile random access memory (FeRAM) based on a field effect transistor (FET) consisting of a monolayer MoS2 channel and a ferroelectric PbTiO3 (PTO) thin film of gate insulator. An epitaxial PTO thin film was deposited on a Nb-doped SrTiO3 (Nb:STO) substrate via pulsed laser deposition. A monolayer MoS2 sheet was exfoliated from a bulk crystal and transferred to the surface of the PTO/Nb:STO. Structural and surface properties of the PTO thin film were characterized by X-ray diffraction and atomic force microscopy, respectively. Raman spectroscopy analysis was performed to identify the single-layer MoS2 sheet on the PTO/Nb:STO. We obtained mobility value (327 cm2/V·s) of the MoS2 channel at room temperature. The MoS2-PTO FeRAM FET showed a wide memory window with 17 kΩ of resistance variation which was attributed to high remnant polarization of the epitaxially grown PTO thin film. According to the fatigue resistance test for the FeRAM FET, however, the resistance states gradually varied during the switching cycles of 109.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (36)
Show source-provided references
1. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 306, 666 (2004).10.1126/science.1102896 ↗
2. K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, Phys. Rev. Lett. 105, 136805 (2010).10.1103/PhysRevLett.105.136805 ↗
3. M. C. Lemme, L.-J. Li, T. Palacios, and F. Schwierz, MRS Bull. 39, 711 (2014).10.1557/mrs.2014.138 ↗
4. F. Xia, H. Wang, D. Xiao, M. Dubey, and A. Ramasubramaniam, Nat. Photonics 8, 899 (2004).10.1038/nphoton.2014.271 ↗
5. S. V. Prabhakar Vattikuti, C. Byon, and C. V. Reddy, Electron. Mater. Lett. 12, 842 (2016).
6. F. Schwierz, Nat. Nanotechnol. 5, 487 (2010).10.1038/nnano.2010.89 ↗
7. R. Mas-Ballesté, C. Gómez-Navarro, J. Gómez-Herrero, and F. Zamora, Nanoscale 3, 20 (2011).10.1039/C0NR00323A ↗
8. Y. Yoon, K. Ganapathi, and S. Salahuddin, Nano Lett. 11, 3768 (2011).10.1021/nl2018178 ↗
9. D. Zhang, L. Gan, Y. Cao, Q. Wang, L. Qi, and X. Guo, Adv. Mater. 24, 2715 (2012).10.1002/adma.201104597 ↗
10. S. Das, H. Y. Chen, A. V. Penumatcha, and J. Appenzeller, Nano Lett. 13, 100 (2013).10.1021/nl303583v ↗
11. Y.-S. Shin, J. Y. Son, M.-H. Jo, Y.-H. Shin, and H. M. Jang, J. Am. Chem. Soc. 133, 5623 (2011).10.1021/ja108464s ↗
12. W.-H. Kim and J. Y. Son, Bull. Korean Chem. Soc. 34, 2563 (2013).10.5012/bkcs.2013.34.9.2563 ↗
13. J. Bao, K. Jeppson, M. Edwards, Y. Fu, L. Ye, X. Lu, and J. Liu, Electron. Mat. Lett. 12, 1 (2016).10.1007/s13391-015-5308-2 ↗
14. S. V. Morozov, K. S. Novoselov, M. I. Katsnelson, F. Schedin, D. C. Elias, J. A. Jaszczak, and A. K. Geim, Phys. Rev. Lett. 100, 016602 (2008).10.1103/PhysRevLett.100.016602 ↗
15. F. Xia, D. B. Farmer, Y.-M. Lin, and P. Avouris, Nano Lett. 10, 715 (2010).10.1021/nl9039636 ↗
16. J. Y. Son, Y.-H. Shin, H. Kim, and H. M. Jang, ACS Nano 4, 2655 (2010).10.1021/nn100234x ↗
17. C. M. Gee, C. C. Tseng, F. Y. Wu, H. P. Chang, L. J. Li, Y. P. Hsieh, C. T. Lin, and J. C. Chen, Displays 34, 315 (2013).10.1016/j.displa.2012.11.002 ↗
18. D. Lembke and A. Kis, ACS Nano 6, 10070 (2012).10.1021/nn303772b ↗
19. R. Ganatra and Q. Zhang, ACS Nano 8, 4074 (2014).10.1021/nn405938z ↗
20. S. Das, H.-Y. Chen, A. V. Penumatcha, and J. Appenzeller, Nano Lett. 13, 100 (2013).10.1021/nl303583v ↗
21. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Nat Nano 6, 147 (2011).10.1038/nnano.2010.279 ↗
22. H. Liu, A. T. Neal, and P. D. Ye, ACS Nano 6, 8563 (2012).10.1021/nn303513c ↗
23. M. Ghittorelli, T. Lenz, H. S. Dehsari, D. Zhao, K. Asadi, P. W. M. Blom, Z. M. Kovács-Vajna, D. M. De Leeuw, and F. Torricelli, Nat. Commun. 8, 15741 (2017).10.1038/ncomms15841 ↗
24. W. Lü, C. Li, L. Zheng, J. Xiao, W. Lin, Q. Li, X. R. Wang, Z. Huang, S. Zeng, K. Han, W. Zhou, K. Zeng, J. Chen, I. Ariando, W. Cao, and T. Venkatesan, Adv. Mater. 29, DOI: 10.1002/adma.201606165 (2017).
25. X. Tian and A. Toriumi, New Opportunity of Ferroelectric Tunnel Junction Memory With Ultrathin HfO2-Based Oxides, Proceeding of 2017 IEEE Electron Devices Technology and Manufacturing Conference, pp. 63–64, IEEE, Toyama, Japan (2017).
26. J. Van Houdt, 3D Memories & Ferroelectrics, 2017 IEEE 9th International Memory Workshop, IEEE, Monterey, USA (2017).
27. H. Yu, C. C. Chung, N. Shewmon, S. Ho, J. H. Carpenter, R. Larrabee, T. Sun, J. L. Jones, H. Ade, B. T. O’Connor, and F. So, Adv. Funct. Mater. 27, 1700461 (2017).10.1002/adfm.201700461 ↗
28. I. Jung and J. Y. Son, Carbon 50, 3854 (2012).10.1016/j.carbon.2012.04.027 ↗
29. X. Hong, A. Posadas, K. Zou, C. H. Ahn, and J. Zhu, Phys. Rev. Lett. 102, 136808 (2009).10.1103/PhysRevLett.102.136808 ↗
30. N. Park, H. Kang, J. Park, Y. Lee, Y. Yun, J.-H. Lee, S.-G. Lee, Y. H. Lee, and D. Suh, ACS Nano 9, 10729 (2015).10.1021/acsnano.5b04339 ↗
31. R. Ramesh, S. Aggarwal, and O. Auciello, Mater. Sci. Eng. R: Rep. 32, 191 (2001).10.1016/S0927-796X(00)00032-2 ↗
32. Z. Zeng, Z. Yin, X. Huang, H. Li, Q. He, G. Lu, F. Boey, and H. Zhang, Angew. Chem. Int. Edit. 50, 11093 (2011).10.1002/anie.201106004 ↗
33. A. Molina-Sánchez and L. Wirtz, Phys. Rev. B 84, 155413 (2011).10.1103/PhysRevB.84.155413 ↗
34. T. K. Song, Y. W. So, D. J. Kim, J. Y. Jo, and T. W. Noh, Integr. Ferroelectr. 78, 191 (2006).10.1080/10584580600660306 ↗
35. W. Wu, D. De, S. C. Chang, Y. Wang, H. Peng, J. Bao, and S. S. Pei, Appl. Phys. Lett. 102, 142106 (2013).10.1063/1.4801861 ↗
36. G. L. Rhun, G. Poullain, R. Bouregba, and G. Leclerc, J. Eur. Ceram. Soc. 25, 2281 (2005).10.1016/j.jeurceramsoc.2005.03.046 ↗