PEDOT gate electrodes with PVP/Al2O3 dielectrics for stable high-performance organic TFTs
Source abstract
Abstract
A poly(3,4-ethylenedioxythiophene) (PEDOT) gate electrode on a polyestersulfone (PES) substrate was used to fabricate inverted staggered pentacene organic thin film transistors (OTFTs). The PEDOT gate formed on the PES substrate exhibited semi-transparency, high conductivity, and excellent adhesion to the substrate. Prior to the deposition of poly-4-vinyl phenol (PVP) dielectrics, a thin Al2O3 layer (12 nm) was coated onto a PEDOT electrode, providing an effective barrier against inter-diffusion between the PVP dielectrics and the underlying PEDOT gate electrode, and against moisture penetration through the PES substrate. This led to stable high-performance OTFTs consisting of a PEDOT gate electrode and PVP/Al2O3 dielectrics. The combined PVP/Al2O3 dielectrics with PEDOT gate electrodes were successfully implemented in flexible organic TFTs that exhibit excellent compatibility with flexible electronics.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Conducting polymers and applications · Advanced Sensor and Energy Harvesting Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (33)
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