journal article·2018-12

Highly In‐Plane Anisotropic 2D GeAs2 for Polarization‐Sensitive Photodetection

Liang Li, Penglai Gong, Daopeng Sheng, Shuao Wang, Weike Wang, Xiangde Zhu, Xingqiang Shi, Fakun Wang, Wei Han, Sanjun Yang, Kailang Liu, Huiqiao Li, Tianyou Zhai

Advanced Materials· Volume 30· Issue 50
Publisher page

Abstract

Abstract Due to the intriguing anisotropic optical and electrical properties, low‐symmetry 2D materials are attracting a lot of interest both for fundamental studies and fabricating novel electronic and optoelectronic devices. Identifying new promising low‐symmetry 2D materials will be rewarding toward the evolution of nanoelectronics and nano‐optoelectronics. In this work, germanium diarsenide (GeAs2), a group IV–V semiconductor with novel low‐symmetry puckered structure, is introduced as a favorable highly anisotropic 2D material into the rapidly growing 2D family. The structural, vibrational, electrical, and optical in‐plane anisotropy of GeAs2 is systematically investigated both theoretically and experimentally, combined with thickness‐dependent studies. Polarization‐sensitive photodetectors based on few‐layer GeAs2 exhibit highly anisotropic photodetection behavior with lineally dichroic ratio up to ≈2. This work on GeAs2 will excite interests in the less exploited regime of group IV–V compounds.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Perovskite Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Material Processing and Die and Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan 430074 P. R. China

Institute of Physical Science and Information Technology Anhui University Hefei 230601 P. R. China

Department of Physics Southern University of Science and Technology Shenzhen 518055 P. R. China

State Key Laboratory of Radiation Medicine and Protection School for Radiological and interdisciplinary Sciences (RAD‐X) Soochow University, Suzhou 215123 P. R. China

Synergetic Innovation Center for Quantum Effects and Application Key Laboratory of Low‐dimensional Quantum Structures and Quantum Control of Ministry of Education College of Physics and Information Science Hunan Normal University Changsha 410081 P. R. China

Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions High Magnetic Field Laboratory of the Chinese Academy of Science Hefei 230031 P. R. China

Funding

National Natural Science Foundation of China · Youth Innovation Promotion Association of the Chinese Academy of Sciences · Natural Science Foundation of Guangdong Province

References (58)

Show source-provided references
1. 10.1126/science.110289610.1126/science.1102896 ↗
2. 10.1039/C7CS00210F10.1039/C7CS00210F ↗
3. 10.1038/s41565-018-0186-z10.1038/s41565-018-0186-z ↗
4. 10.1002/adfm.20180018110.1002/adfm.201800181 ↗
5. 10.1002/adfm.20180033910.1002/adfm.201800339 ↗
6. 10.1002/adma.20170328610.1002/adma.201703286 ↗
7. 10.1002/adom.20180005810.1002/adom.201800058 ↗
8. 10.1002/smtd.20170034910.1002/smtd.201700349 ↗
9. 10.1039/C7CS00556C10.1039/C7CS00556C ↗
10. 10.1103/PhysRevB.89.23531910.1103/PhysRevB.89.235319 ↗
11. 10.1038/nnano.2016.17110.1038/nnano.2016.171 ↗
12. 10.1038/nnano.2014.3510.1038/nnano.2014.35 ↗
13. 10.1021/nn501226z10.1021/nn501226z ↗
14. 10.1038/ncomms547510.1038/ncomms5475 ↗
15. 10.1038/ncomms545810.1038/ncomms5458 ↗
16. 10.1038/nnano.2015.11210.1038/nnano.2015.112 ↗
17. 10.1103/PhysRevLett.113.10680210.1103/PhysRevLett.113.106802 ↗
18. 10.1038/ncomms1407110.1038/ncomms14071 ↗
19. 10.1103/PhysRevB.93.12140510.1103/PhysRevB.93.121405 ↗
20. 10.1002/adma.20160016610.1002/adma.201600166 ↗
21. 10.1088/2053-1583/2/1/01100210.1088/2053-1583/2/1/011002 ↗
22. 10.1021/acsnano.6b0870410.1021/acsnano.6b08704 ↗
23. 10.1002/adfm.20170385810.1002/adfm.201703858 ↗
24. 10.1021/acsnano.7b0486010.1021/acsnano.7b04860 ↗
25. 10.1021/acsnano.7b0836810.1021/acsnano.7b08368 ↗
26. 10.1002/adma.20170640210.1002/adma.201706402 ↗
27. 10.1002/adma.20170677110.1002/adma.201706771 ↗
28. 10.1002/adfm.20170737910.1002/adfm.201707379 ↗
29. 10.1002/adma.20170593410.1002/adma.201705934 ↗
30. 10.1039/C8TC02037J10.1039/C8TC02037J ↗
31. 10.1107/S0365110X6200040710.1107/S0365110X62000407 ↗
32. 10.1103/PhysRevB.3.258110.1103/PhysRevB.3.2581 ↗
33. 10.1021/acs.chemmater.7b0134310.1021/acs.chemmater.7b01343 ↗
34. 10.1016/j.jssc.2014.04.02110.1016/j.jssc.2014.04.021 ↗
35. 10.1021/acs.chemmater.7b0327910.1021/acs.chemmater.7b03279 ↗
36. 10.1002/adma.20150457210.1002/adma.201504572 ↗
37. 10.1021/acs.nanolett.5b0111710.1021/acs.nanolett.5b01117 ↗
38. 10.1103/PhysRevLett.116.08740110.1103/PhysRevLett.116.087401 ↗
39. 10.1002/smll.20170082310.1002/smll.201700823 ↗
40. 10.1002/adfm.20120115610.1002/adfm.201201156 ↗
41. 10.1103/PhysRevB.5.147310.1103/PhysRevB.5.1473 ↗
42. 10.1021/nn100393710.1021/nn1003937 ↗
43. 10.1021/acs.nanolett.5b0454010.1021/acs.nanolett.5b04540 ↗
44. 10.1021/acsnano.5b0069810.1021/acsnano.5b00698 ↗
45. 10.1039/C5NR04349B10.1039/C5NR04349B ↗
46. 10.1103/PhysRevB.97.03541110.1103/PhysRevB.97.035411 ↗
47. 10.1103/PhysRevLett.99.18680110.1103/PhysRevLett.99.186801 ↗
48. 10.1021/acs.nanolett.6b0262910.1021/acs.nanolett.6b02629 ↗
49. 10.1103/PhysRevLett.120.08680110.1103/PhysRevLett.120.086801 ↗
50. 10.1038/nmat401410.1038/nmat4014 ↗
51. 10.1103/PhysRevApplied.5.01401210.1103/PhysRevApplied.5.014012 ↗
52. 10.1002/adma.20170501510.1002/adma.201705015 ↗
53. 10.1021/jacs.7b0631410.1021/jacs.7b06314 ↗
54. 10.1103/PhysRevB.50.1795310.1103/PhysRevB.50.17953 ↗
55. 10.1002/jcc.2105710.1002/jcc.21057 ↗
56. 10.1021/jp506881v10.1021/jp506881v ↗
57. 10.1063/1.156406010.1063/1.1564060 ↗
58. Bassani F. · 1975