journal article·2004-04-05

All‐Organic Permanent Memory Transistor Using an Amorphous, Spin‐Cast Ferroelectric‐like Gate Insulator

R. Schroeder, L. A. Majewski, M. Grell

Advanced Materials· Volume 16· Issue 7
Publisher page

Abstract

An all‐organic memory transistor (“FerrOFET”) with a solution‐ deposited ferroelectric‐like nylon gate insulator is demonstrated. Cheaper and easier to build than inorganic ferroelectric transistors, yet with comparable performance and compatible with flexible substrates, this device is suitable for most information storage organic electronics applications. The Figure shows the memory function of the FerrOFET as hysteresis in the transfer characteristics.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Advanced Sensor and Energy Harvesting Materials · Conducting polymers and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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