Black Arsenic: A Layered Semiconductor with Extreme In‐Plane Anisotropy
Abstract
Research context
OpenAlex topics: 2D Materials and Applications · Quantum Dots Synthesis And Properties · Graphene research and applications
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Affiliations
Department of Materials Science and Engineering University of California Berkeley CA 94720 USA
ANTARES Beamline Synchrotron SOLEIL Université Paris‐Saclay L'Orme des Merisiers Saint Aubin‐BP 48 91192 Gif sur Yvette Cedex France
Department of Physics University of California Berkeley CA 94720 USA
Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley CA 94720 USA
Institute of Physics and University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing 100190 China
Key Laboratory of Organic Solids Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China
Department of Materials Science and Engineering Stanford University Stanford CA 94305 USA
State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China
School of Physics and Electronics Hunan Key Laboratory for Super‐microstructure and Ultrafast Process Central South University Changsha 410083 China
Funding
National Science Foundation · China Scholarship Council · National Natural Science Foundation of China · Chicago State University · Centre National de la Recherche Scientifique