High‐mobility Ambipolar Transistors and High‐gain Inverters from a Donor–Acceptor Copolymer Semiconductor

High-performance ambipolar transistors and inverters are demonstrated using a new donor–acceptor copolymer semiconductor. The ambipolar transistors show electron and hole mobilities of up to 0.04 and 0.003 cm2 V−1 s−1, respectively. Voltage transfer curves of the inverters made on common gold electrodes showed sharp switching with gain of 30. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.