Domain Engineering for Enhanced Ferroelectric Properties of Epitaxial (001) BiFeO Thin Films

Ho Won Jang; Daniel Ortiz; Seung‐Hyub Baek; Chad M. Folkman; Rasmi R. Das; Padraic Shafer; Yanbin Chen; Christofer T. Nelson; Xiaoqing Pan; Ramamoorthy Ramesh; Chang‐Beom Eom

doi:10.1002/adma.200800823

journal article·2009-02-16Open access

Domain Engineering for Enhanced Ferroelectric Properties of Epitaxial (001) BiFeO Thin Films

Ho Won Jang, Daniel Ortiz, Seung‐Hyub Baek, Chad M. Folkman, Rasmi R. Das, Padraic Shafer, Yanbin Chen, Christofer T. Nelson, Xiaoqing Pan, Ramamoorthy Ramesh, Chang‐Beom Eom

Advanced Materials· Volume 21· Issue 7

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Source abstract

Abstract

Two-variant stripe domains in BiFeO3 films on miscut (001) SrTiO3 substrates exhibit square-like, complete ferroelectric switching with low leakage current. Both the preferential distortion of BiFeO3 unit cells and the persistent step-flow growth induced by the substrate anisotropy are the origins of the formation of the two-variant stripe domains in (001) BiFeO3 films.

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Research context

Electronic materials

OpenAlex topics: Multiferroics and related materials · Ferroelectric and Piezoelectric Materials · Dielectric properties of ceramics

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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