Carbon Nanotubes/N-Si Heterojunction with High Dielectric Constant and Rectification Ratio, Low Dielectric Loss Tangent

In this document, the structure of carbon nanotubes behaves as a p-type semiconductor deposited on the n-silicon wafer formed P-N junction, this structure of Au/CNTs/n-Si/Al has novel electric and dielectric properties such as high rectification ratio, low dielectric loss tangent, and high dielectric loss ε ′, which increases with declines frequency reaches to 4 × 10 ⁴ in the positive direction of dielectric constant at a frequency equals 10 ² Hz and reaches to −1 × 10 ⁶ in the negative region of dielectric constant at frequency 10 Hz. The dielectric loss tangent (tan δ ) has low values raised with decline frequencies their values fluctuate from 0.15 to 0. 20. The ε ′ and tan δ have negative values at high and low frequencies, though the ε ′ has positive values at mid frequencies. The electrical properties of this device were investigated by studying I–V, Cheung, dv/dlnI, and Norde characterization. The parameters such as rectification ratio (RR), the resistance of junction (R _j ), barrier height ( ϕ _b ), and ideality factor were calculated.