Electrical Conductance at Directly Bonded Si/Si Interfaces in Dependence on Oxygen Concentration in Bonding Ambient

Direct semiconductor wafer bonding is a versatile fabrication scheme for high-performance optoelectronic devices. In the present study, the influence of oxygen concentration in the bonding ambient on the electrical conductance at directly bonded Si/Si interfaces is experimentally investigated in relation to interfacial oxidation. The interfacial electrical conductivity is observed higher for lower oxygen concentration at each bonding temperature in the range of 200 °C–400 °C. Ohmic contact characteristics are found attainable in the bonded interfaces by proper choice of bonding conditions. To support the electrical conductance trend, an X-ray photoelectron spectroscopy analysis confirms the extent of interfacial oxidation to be higher for lower oxygen concentration and higher bonding temperature. In addition, solar cell fabrication and operation with a current path through the bonded interface are demonstrated by using the bonding method in a low oxygen concentration ambient. The energy conversion efficiency of the bonded cell is observed comparable to that of an unbonded reference, to thus verify the suitability of the bonding scheme for device applications.