Al2O3 Passivation Engineering for Defect Blockade and Environmental Stability Enhancement in Solution-Processed In2O3 TFT
Source abstract
Abstract
Solution-processed amorphous indium oxide (In2O3) channels demonstrate promising potential for thin-film transistor (TFT) applications, but environmental instability remains a critical challenge. This study systematically investigates plasma-enhanced atomic layer deposition-grown aluminum oxide (Al2O3) passivation layers (5/15/20 nm) and low-temperature solution-processed amorphous In2O3 for the optimization of performance and stability in n-type In2O3 TFTs. Contrary to pristine In2O3 TFTs, the results show the passivation effect exhibits significant thickness dependence and reveal a critical 5 nm threshold for effective device enhancement including a highest saturation electron mobility and a lower threshold voltage, and a favorable long-term stability. Moreover, in order to explore the cases of enhancement, the interface defect was investigated. The improvement is partially attributed to the reduction of interfacial defects through the protective effect of Al2O3 passivation layer in blocking environmental molecules and light exposure, which makes it suitable for the low-power and flexible applications.
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Industrial Vision Systems and Defect Detection · Silicon and Solar Cell Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (45)
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1. Comparison of the characteristics of semiconductor gas sensors with different transducers fabricated on the same substrate10.1016/j.snb.2021.129661 ↗
2. Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix10.1038/s41565-021-00966-5 ↗
3. Mechanical durability of flexible/stretchable a-IGZO TFTs on PI Island for wearable electronic application10.1021/acsaelm.1c00806 ↗
4. Field-driven athermal activation of amorphous metal oxide semiconductors for flexible programmable logic circuits and neuromorphic electronics10.1002/smll.201901457 ↗
5. Silicon cations intermixed indium zinc oxide interface for high-performance thin-film transistors using a solution process10.1021/acsami.7b06643 ↗
6. Bulk charge-transfer doping of amorphous metal oxide: fullerene blends for solution-processed amorphous indium zinc oxide thin-film transistors10.1039/C9TC01801H ↗
7. Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrOx dielectric10.1021/am505602w ↗
8. Gas adsorption effects on electrical properties of amorphous In2O3 thin-film transistors under various environments10.35848/1347-4065/ab7413 ↗
9. Performance of transparent indium-gallium-zinc oxide thin film transistor prepared by all plasma enhanced atomic layer deposition10.1109/LED.2023.3239379 ↗
10. Argon and oxygen gas flow rate dependency of sputtering-based indium-gallium-zinc oxide thin-film transistors10.3390/mi14071394 ↗
11. Graphene quantum dots modulated solution-derived InGaO thin-film transistors and stress stability exploration10.1007/s12598-023-02307-y ↗
12. Fabrication of high-performance solution processed thin film transistors by introducing a buffer layer10.1016/j.apsusc.2019.144360 ↗
13. Enhanced stability and mobility of solution-processed oxide thin-film transistors with bilayer terbium-incorporated indium oxide channel10.1063/5.0098765 ↗
14. Performance Enhancement of Transparent Amorphous IGZO Thin-Film Transistor Realized by Sputtered Amorphous AlOx Passivation Layer10.1149/2162-8777/abf724 ↗
15. Effects of ambient atmosphere on electrical characteristics of Al2O3 passivated InGaZnO thin film transistors during positive-bias-temperature-stress operation10.1149/1.3534828 ↗
16. Water as origin of hysteresis in zinc tin oxide thin-film transistors10.1021/am301308y ↗
17. Low temperature, highly stable ZnO thin-film transistors10.1016/j.mee.2023.112063 ↗
18. High-performance thin-film transistors with sputtered IGZO/Ga2O3 heterojunction10.1109/TED.2022.3216559 ↗
19. InSnZnO thin-film transistors with nitrogenous self-assembled multilayers passivation10.1109/TED.2021.3114267 ↗
20. Effects of Al2O3 surface passivation on the radiation hardness of IGTO thin films for thin-film transistor applications10.1016/j.apsusc.2021.152096 ↗
21. Stabilizing solution-processed metal oxide thin-film transistors via trilayer organic-inorganic hybrid passivation10.1063/5.0038128 ↗
22. Analysis of total ionizing dose effect and degradation mechanism of a-IGZO TFT10.1007/s10854-025-14458-y ↗
23. Origin of degradation of flexible poly-Si TFTs under dynamic bending stress10.1109/LED.2021.3116230 ↗
24. Improvement in reliability of amorphous indium-gallium-zinc oxide thin-film transistors with Teflon/SiO2 bilayer passivation under gate bias stress10.7567/JJAP.55.02BC17 ↗
25. Bilayer-passivated stable dif-TES-ADT organic thin-film transistors10.1063/5.0065403 ↗
26. Synthesis of a tellurium semiconductor with an organic-inorganic hybrid passivation layer for high-performance p-type thin film transistors10.1021/acsaelm.3c00620 ↗
27. Improving reliability of a-InGaZnO TFTs with optimal location of Al2O3 passivation in moist environment10.1109/TED.2022.3166745 ↗
28. Enhanced high-energy proton radiation hardness of ZnO thin-film transistors with a passivation layer10.1186/s40580-025-00474-5 ↗
29. Effects of high-energy X-ray Irradiation on the electrical and chemical properties of in-Ga-Sn-O Thin Films with Al2O3 passivation layer for thin-film transistor applications10.1021/acsaelm.3c00006 ↗
30. Enhanced barrier and optical properties of inorganic nano-multilayers on pen substrate through hybrid deposition10.3390/ma17236007 ↗
31. Reliability improvement of high mobility oxide TFTs based on hydrogen-resistant PEALD Al2O3 Gate insulators grown with N2O plasma10.1021/acsami.4c18561 ↗
32. Activation of Al2O3 surface passivation of silicon: separating bulk and surface effects10.1016/j.apsusc.2023.158786 ↗
33. Role of ALD Al2O3 surface passivation on the performance of p-Type Cu2O thin film transistors10.1021/acsami.0c18915 ↗
34. High-mobility and low subthreshold swing amorphous InGaZnO thin-film transistors by in situ H2 plasma and neutral oxygen beam irradiation treatment10.1088/1361-6528/acb5f9 ↗
35. Fabrication of an In-rich IGZO TFT by Co-sputtering of In2O3 and IGZO and characterization of its compensated positive bias stress properties10.1007/s42341-024-00575-8 ↗
36. From the passivation layer on aluminum to lithium anode in batteries10.1007/s11661-024-07658-4 ↗
37. Effect of amorphous Si-Zn-Sn-O passivation layer on Si-In-Zn-O thin film transistors10.1007/s12633-024-03105-6 ↗
38. Aluminum oxide/fluoride self-assembled monolayer double gate dielectric for solution-processed indium oxide thin-film transistors10.1007/s13391-022-00353-9 ↗
39. Sol-gel Processed In2O3 TFT with hybrid inorganic/organic dielectric layers for low-voltage driving10.1007/s42835-025-02218-1 ↗
40. Effects of iodine doping on structural and electrical characteristics of solution-processed indium oxide thin-film transistors and its potential application for iodine sensing10.1007/s40042-024-01099-3 ↗
41. Multi-functional molybdenum oxide doping to improve the electrical characteristics of indium oxide thin film transistors10.1007/s13391-024-00522-y ↗
42. Engineered amorphous indium oxide thin-film transistors for electrical performance enhancement by focused oxygen plasma treatment10.1007/s11664-024-11597-6 ↗
43. Electrical performance and stability improvement of In2O3 thin-film transistors engendered by oxygen-free focused plasma treatment10.1007/s13391-024-00531-x ↗
44. Tuning the electrical performance of solution-processed In2O3TFTs by low-temperature with HfO2-PVP hybrid dielectric10.1016/j.mtcomm.2021.102120 ↗
45. ZrHfO2-PMMA hybrid dielectric layers for high-performance all solution-processed In2O3-based TFTs10.1016/j.materresbull.2022.111768 ↗