The Effect of Interface States on Single-Walled Carbon Nanotube Transistors
Source abstract
Abstract
Different from p-type single-walled carbon nanotubes (SWCNT) thin film transistors (TFTs) with SiO2 dielectrics, air-stable top-gated n-type SWCNT TFTs are reported with amorphous silicon nitride (SiNx) dielectrics exhibiting the strong dependence of deposition methods and conditions, and metal contacts. Amorphous silicon TFTs-like characteristics was observed from semiconducting single-chirality (6,5) SWCNT TFTs with SiNx deposited at 225°C and appropriate NH3/SiH4 feeding ratio of 10 sccm/5.3 sccm using plasma enhanced chemical vapor deposition (PECVD). These results are interpreted as the effect of interface states between (6,5) SWCNT and SiNx gate dielectrics, which provide the avenue to alter the ratio of free electrons and trapped electrons along applied gate potential.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Carbon Nanotubes in Composites · Diamond and Carbon-based Materials Research · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (38)
Show source-provided references
1. 10.1126/science.aaa433510.1126/science.aaa4335 ↗
2. 10.1126/science.aab275010.1126/science.aab2750 ↗
3. 10.1039/c2cs35325c10.1039/c2cs35325c ↗
4. 10.1021/nl202695v10.1021/nl202695v ↗
5. 10.1021/am501332610.1021/am5013326 ↗
6. 10.1021/nn200429810.1021/nn2004298 ↗
7. 10.1038/nature0711010.1038/nature07110 ↗
8. 10.1021/nl072736110.1021/nl0727361 ↗
9. 10.1002/adma.20130279310.1002/adma.201302793 ↗
10. 10.1038/nmat76910.1038/nmat769 ↗
11. 10.1116/1.182404810.1116/1.1824048 ↗
12. 10.1063/1.292020610.1063/1.2920206 ↗
13. 10.1002/smll.20120123710.1002/smll.201201237 ↗
14. 10.1038/srep1175510.1038/srep11755 ↗
15. 10.1021/nl503709810.1021/nl5037098 ↗
16. 10.1038/2995410.1038/29954 ↗
17. Sze S. M. , Semiconductor Devices-Physics and Technology, Wiley, Toronto, (1985).
18. 10.1103/PhysRevLett.89.10680110.1103/PhysRevLett.89.106801 ↗
19. 10.1103/PhysRevLett.111.23680210.1103/PhysRevLett.111.236802 ↗
20. 10.1038/nature0179710.1038/nature01797 ↗
21. 10.1063/1.210812710.1063/1.2108127 ↗
22. 10.1149/1.205484110.1149/1.2054841 ↗
23. 10.1149/1.222114910.1149/1.2221149 ↗
24. 10.1063/1.34336110.1063/1.343361 ↗
25. 10.1063/1.9479410.1063/1.94794 ↗
26. 10.1109/LED.2007.90007810.1109/LED.2007.900078 ↗
27. 10.1149/1.208651710.1149/1.2086517 ↗
28. 10.1063/1.489182410.1063/1.4891824 ↗
29. 10.1021/acsami.6b0664710.1021/acsami.6b06647 ↗
30. 10.1109/JEDS.2013.224464110.1109/JEDS.2013.2244641 ↗
31. 10.1109/16.4093310.1109/16.40933 ↗
32. 10.1063/1.168940310.1063/1.1689403 ↗
33. 10.1109/T-ED.1982.2093210.1109/T-ED.1982.20932 ↗
34. 10.1109/PROC.1968.661810.1109/PROC.1968.6618 ↗
35. 10.1063/1.148087710.1063/1.1480877 ↗
36. 10.1116/1.58986810.1116/1.589868 ↗
37. 10.1103/PhysRevB.83.19340710.1103/PhysRevB.83.193407 ↗
38. 10.1038/nnano.2011.19610.1038/nnano.2011.196 ↗